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Model R6015FNX
Description 10VDrive N-channel MOSFET 10V Drive Nch MOSFET
Product QR code
Brand: ROHM Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
26.95  yuan 26.95yuan
5+:
$ 31.5257
50+:
$ 30.1784
200+:
$ 29.4239
500+:
$ 29.2353
1000+:
$ 29.0467
2500+:
$ 28.8312
5000+:
$ 28.6964
7500+:
$ 28.5617
Quantity
5+
50+
200+
500+
1000+
Price
$31.5257
$30.1784
$29.4239
$29.2353
$29.0467
Price $ 31.5257 $ 30.1784 $ 29.4239 $ 29.2353 $ 29.0467
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1270) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 0.27 Ω

Technical parameters/polarity: N

Technical parameters/dissipated power: 50 W

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 15A

Technical parameters/rise time: 45 ns

Technical parameters/Input capacitance (Ciss): 1660pF @25V(Vds)

Technical parameters/descent time: 35 ns

Technical parameters/dissipated power (Max): 50W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Not Recommended

Other/Packaging Methods: Bulk

Other/Minimum Packaging: 1000

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
R5016FNX R5016FNX ROHM Semiconductor 类似代替 TO-220-3
10V驱动N沟道MOSFET 10V Drive Nch MOSFET
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