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Model R5016FNX
Description 10VDrive N-channel MOSFET 10V Drive Nch MOSFET
Product QR code
Brand: ROHM Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
53.34  yuan 53.34yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2037) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/drain source resistance:

0.22 Ω

 

Technical parameters/polarity:

N

 

Technical parameters/dissipated power:

50W (Tc)

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/Continuous drain current (Ids):

16A

 

Technical parameters/rise time:

60 ns

 

Technical parameters/Input capacitance (Ciss):

1700pF @25V(Vds)

 

Technical parameters/descent time:

35 ns

 

Technical parameters/dissipated power (Max):

50W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Bulk

 

Other/Minimum Packaging:

1000

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
R6015FNX R6015FNX ROHM Semiconductor 类似代替 TO-220-3
10V驱动N沟道MOSFET 10V Drive Nch MOSFET
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