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Description MOSFET IGBT gate driver, three-phase, Infineon # # # MOSFET and IGBT driver, Infineon (International Rectifier)
Product QR code
Brand: Infineon
Packaging SOIC-28
Delivery time
Packaging method Tube
Standard packaging quantity 1
89.74  yuan 89.74yuan
1+:
$ 103.2010
10+:
$ 98.7140
100+:
$ 97.9063
250+:
$ 97.2782
500+:
$ 96.2910
1000+:
$ 95.8423
2500+:
$ 95.2141
5000+:
$ 94.6757
Quantity
1+
10+
100+
250+
500+
Price
$103.2010
$98.7140
$97.9063
$97.2782
$96.2910
Price $ 103.2010 $ 98.7140 $ 97.9063 $ 97.2782 $ 96.2910
Start batch production 1+ 10+ 100+ 250+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(4994) Minimum order quantity(1)
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Technical parameters/power supply voltage (DC): 10.0V (min)

Technical parameters/rise/fall time: 80ns, 35ns

Technical parameters/number of output interfaces: 6

Technical parameters/output voltage: 10.20 V

Technical parameters/output current: 420 mA

Technical parameters/number of channels: 3

Technical parameters/dissipated power: 1600 mw

Technical parameters/descent time (Max): 55 ns

Technical parameters/rise time (Max): 125 ns

Technical parameters/operating temperature (Max): 125 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 1600 mW

Technical parameters/power supply voltage: 10V ~ 20V

Technical parameters/power supply voltage (Max): 20 V

Technical parameters/power supply voltage (Min): 10 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 28

Encapsulation parameters/Encapsulation: SOIC-28

External dimensions/length: 18.1 mm

External dimensions/width: 7.6 mm

External dimensions/height: 2.35 mm

External dimensions/packaging: SOIC-28

Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IR2132STRPBF IR2132STRPBF Infineon 类似代替 SOIC-28
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
PDF
IR2132STRPBF IR2132STRPBF International Rectifier 类似代替 SOIC-28
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
PDF

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