Technical parameters/power supply voltage (DC): 10.0V (min)
Technical parameters/number of output interfaces: 3
Technical parameters/dissipated power: 1600 mW
Technical parameters/descent time (Max): 55 ns
Technical parameters/rise time (Max): 125 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1600 mW
Technical parameters/power supply voltage: 10V ~ 20V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: SOIC-28
External dimensions/height: 2.35 mm
External dimensions/packaging: SOIC-28
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR2132STRPBF
|
Infineon | 类似代替 | SOIC-28 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IR2132STRPBF
|
International Rectifier | 类似代替 | SOIC-28 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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