Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 5 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 200 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/Continuous drain current (Ids): 75A
Technical parameters/rise time: 145 ns
Technical parameters/Input capacitance (Ciss): 3965pF @25V(Vds)
Technical parameters/descent time: 92 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 200W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK9506-40B
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BUK9506-40B
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NXP | 功能相似 | TO-220 |
的TrenchMOS逻辑电平FET TrenchMOS logic level FET
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NXP | 功能相似 | SOT-78 |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
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