Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 203 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 129A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | SOT-78 |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
|
||
PHP129NQ04LT,127
|
NXP | 功能相似 | TO-220-3 |
TO-220AB N-CH 40V 75A
|
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