Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.04 Ω
Technical parameters/dissipated power: 88 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 810 pF
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/rise time: 70 ns
Technical parameters/Input capacitance (Ciss): 810pF @25V(Vds)
Technical parameters/rated power (Max): 88 W
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 88W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.3 mm
External dimensions/width: 9.4 mm
External dimensions/height: 4.5 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDB031N08
|
Fairchild | 功能相似 | TO-263-3 |
FDB031N08 系列 75 V 3.1 mOhm N沟道 PowerTrench® MOSFET - D2PAK-3
|
||
|
|
Philips | 功能相似 |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
|||
PHB29N08T
|
NXP | 功能相似 | D2PAK |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
||
PHB29N08T,118
|
NXP | 类似代替 | TO-263-3 |
晶体管, MOSFET, N沟道, 27 A, 75 V, 0.04 ohm, 11 V, 4 V
|
||
PHB29N08T,118
|
Nexperia | 类似代替 | TO-263-3 |
晶体管, MOSFET, N沟道, 27 A, 75 V, 0.04 ohm, 11 V, 4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review