Technical parameters/frequency: 500 MHz
Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 7 A
Technical parameters/dissipated power: 79 W
Technical parameters/drain source voltage (Vds): 40.0 V
Technical parameters/leakage source breakdown voltage: 40 V
Technical parameters/Continuous drain current (Ids): 7.00 A
Technical parameters/output power: 25 W
Technical parameters/gain: 14.5 dB
Technical parameters/test current: 200 mA
Technical parameters/Input capacitance (Ciss): 86pF @12.5V(Vds)
Technical parameters/operating temperature (Max): 165 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 79000 mW
Technical parameters/rated voltage: 40 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: PowerSO-10RF
External dimensions/length: 7.5 mm
External dimensions/width: 9.4 mm
External dimensions/height: 3.5 mm
External dimensions/packaging: PowerSO-10RF
Physical parameters/operating temperature: -65℃ ~ 165℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PD55025-E
|
ST Microelectronics | 类似代替 | PowerSO-10RF |
LDMOST 系列 N沟道 增强模式 射频 功率晶体管 PowerSO-10RF
|
||
PD55025STR-E
|
ST Microelectronics | 完全替代 | PowerSO-10RF |
Trans RF MOSFET N-CH 40V 7A 3Pin PowerSO-10RF (Straight lead) T/R
|
||
PD55025TR-E
|
ST Microelectronics | 功能相似 | PowerSO-10RF-2 |
Trans RF MOSFET N-CH 40V 7A 3Pin PowerSO-10RF (Formed lead) T/R
|
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