Technical parameters/frequency: | 500 MHz |
|
Technical parameters/dissipated power: | 79 W |
|
Technical parameters/Leakage source breakdown voltage: | 40 V |
|
Technical parameters/output power: | 25 W |
|
Technical parameters/gain: | 14.5 dB |
|
Technical parameters/test current: | 200 mA |
|
Technical parameters/Input capacitance (Ciss): | 86pF @12.5V(Vds) |
|
Technical parameters/operating temperature (Max): | 165 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 79000 mW |
|
Technical parameters/rated voltage: | 40 V |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | PowerSO-10RF |
|
Dimensions/Length: | 7.5 mm |
|
Dimensions/Width: | 9.4 mm |
|
Dimensions/Height: | 3.5 mm |
|
Dimensions/Packaging: | PowerSO-10RF |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PD55025-E
|
ST Microelectronics | 完全替代 | PowerSO-10RF |
LDMOST 系列 N沟道 增强模式 射频 功率晶体管 PowerSO-10RF
|
||
PD55025S-E
|
ST Microelectronics | 功能相似 | PowerSO-10RF |
RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
|
||
PD55025TR-E
|
ST Microelectronics | 功能相似 | PowerSO-10RF-2 |
Trans RF MOSFET N-CH 40V 7A 3Pin PowerSO-10RF (Formed lead) T/R
|
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