Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 910mW (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 15.0 A
Technical parameters/rise time: 42 ns
Technical parameters/Input capacitance (Ciss): 5300pF @25V(Vds)
Technical parameters/rated power (Max): 910 mW
Technical parameters/descent time: 56 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 910mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMS4800NR2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
功率MOSFET的30 V , 8 A, N沟道, SOIC- 8 Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
|
||
NTMS4807NR2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
N 通道功率 MOSFET,30V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
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