Chip AI consultant
Technical parameters/number of channels: | 1 |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.55 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 1.20 A, 12.2 A |
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Technical parameters/rise time: | 6.5 ns |
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Technical parameters/Input capacitance (Ciss): | 2900pF @24V(Vds) |
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Technical parameters/rated power (Max): | 860 mW |
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Technical parameters/descent time: | 17 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 860mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTMS4800NR2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
功率MOSFET的30 V ， 8 A， N沟道， SOIC- 8 Power MOSFET 30 V, 8 A, N−Channel, SOIC−8
|
||
NTMS4802NR2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
15A,30V,N沟道MOSFET
|
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