Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 75.0 A
Technical parameters/drain source resistance: 13.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.25W (Ta), 74.4W (Tc)
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: 25.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 75.0 A
Technical parameters/rise time: 1.3 ns
Technical parameters/Input capacitance (Ciss): 1333pF @20V(Vds)
Technical parameters/descent time: 5.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.25W (Ta), 74.4W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB75N03L09G
|
ON Semiconductor | 类似代替 | TO-263-3 |
35V,75A,N沟道MOSFET
|
||
NTB75N03L09T4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
35V,75A,N沟道MOSFET
|
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