Technical parameters/rated voltage (DC): | 30.0 V |
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Technical parameters/rated current: | 75.0 A |
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Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 8 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/Input capacitance: | 5.63 nF |
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Technical parameters/gate charge: | 75.0 nC |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 75.0 A |
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Technical parameters/rise time: | 130 ns |
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Technical parameters/Input capacitance (Ciss): | 5635pF @25V(Vds) |
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Technical parameters/descent time: | 105 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 2.5W (Ta), 125W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Length: | 10.29 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB75N03L09T4G
|
ON Semiconductor | 完全替代 | TO-263-3 |
35V,75A,N沟道MOSFET
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NTB75N03RT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
Trans MOSFET N-CH 25V 75A 3Pin(2+Tab) D2PAK T/R
|
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