Technical parameters/rated voltage (DC): 42.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/number of output interfaces: 1
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 165 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/drain source voltage (Vds): 42.0 V
Technical parameters/leakage source breakdown voltage: 42 V
Technical parameters/breakdown voltage of gate source: ±14.0 V
Technical parameters/Continuous drain current (Ids): 2.00 A
Technical parameters/output current (Max): 2 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.57 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NIF5002NT1
|
ON Semiconductor | 类似代替 | TO-261-4 |
42V门限,具有过温和过流保护
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review