Technical parameters/rated voltage (DC): 42.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/number of output interfaces: 1
Technical parameters/drain source resistance: 165 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.10 W
Technical parameters/drain source voltage (Vds): 42.0 V
Technical parameters/leakage source breakdown voltage: 42.0 V
Technical parameters/breakdown voltage of gate source: ±14.0 V
Technical parameters/Continuous drain current (Ids): 2.00 A
Technical parameters/output current (Max): 2 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NIF5002NT3
|
ON Semiconductor | 类似代替 | TO-261-4 |
自我保护FET的温度和电流限制 Self-Protected FET with Temperature and Current Limit
|
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