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Model MRFE6P3300HR5
Description FET RF 66V 863MHz NI-860C3
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Brand: NXP
Packaging NI-860C3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3663) Minimum order quantity(1)
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Technical parameters/frequency: 857MHz ~ 863MHz

Technical parameters/output power: 270 W

Technical parameters/gain: 20.4 dB

Technical parameters/test current: 1.6 A

Technical parameters/Input capacitance (Ciss): 106pF @32V(Vds)

Technical parameters/operating temperature (Max): 225 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/rated voltage: 66 V

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: NI-860C3

External dimensions/packaging: NI-860C3

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRFE6P3300HR3 MRFE6P3300HR3 Freescale 完全替代 NI-860C3
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
PDF
MRFE6P3300HR3 MRFE6P3300HR3 NXP 完全替代 NI-860C3
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
PDF

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