Technical parameters/frequency: | 857MHz ~ 863MHz |
|
Technical parameters/rated current: | 10 µA |
|
Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/output power: | 270 W |
|
Technical parameters/gain: | 20.4 dB |
|
Technical parameters/test current: | 1.6 A |
|
Technical parameters/Input capacitance (Ciss): | 106pF @32V(Vds) |
|
Technical parameters/operating temperature (Max): | 225 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/rated voltage: | 66 V |
|
Technical parameters/power supply voltage: | 32 V |
|
Encapsulation parameters/installation method: | Screw |
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Package parameters/number of pins: | 5 |
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Encapsulation parameters/Encapsulation: | NI-860C3 |
|
Dimensions/Packaging: | NI-860C3 |
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Physical parameters/operating temperature: | -65℃ ~ 225℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRFE6P3300HR3
|
Freescale | 功能相似 | NI-860C3 |
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
|
||
MRFE6P3300HR3
|
NXP | 功能相似 | NI-860C3 |
RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
|
||
|
|
Freescale | 类似代替 | NI-860C3 |
Single N-CDMA Lateral N-Channel RF Power MOSFET, 865-900MHz, 47W Avg., 28V
|
||
|
|
NXP | 类似代替 | NI-860C3 |
Single N-CDMA Lateral N-Channel RF Power MOSFET, 865-900MHz, 47W Avg., 28V
|
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