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Model MRF8P26080HSR3
Description Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2500-2700MHz, 14W Avg., 28V
Product QR code
Brand: NXP
Packaging NI-780HS-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
426.41  yuan 426.41yuan
1+:
$ 490.3681
10+:
$ 477.5758
50+:
$ 467.7685
100+:
$ 464.3572
200+:
$ 461.7988
500+:
$ 458.3875
1000+:
$ 456.2555
2000+:
$ 454.1235
Quantity
1+
10+
50+
100+
200+
Price
$490.3681
$477.5758
$467.7685
$464.3572
$461.7988
Price $ 490.3681 $ 477.5758 $ 467.7685 $ 464.3572 $ 461.7988
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1015) Minimum order quantity(1)
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Technical parameters/frequency: 2.62 GHz

Technical parameters/halogen-free state: Halogen Free

Technical parameters/dissipated power: 140000 mW

Technical parameters/output power: 14 W

Technical parameters/gain: 15 dB

Technical parameters/test current: 300 mA

Technical parameters/operating temperature (Max): 225 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 140000 mW

Technical parameters/rated voltage: 65 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: NI-780HS-4

External dimensions/height: 4.32 mm

External dimensions/packaging: NI-780HS-4

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AFT26P100-4WSR3 AFT26P100-4WSR3 NXP 类似代替 NI-780HS-4
RF Power Transistor,2496 to 2690MHz, 87W, Typ Gain in dB is 15.3 @ 2690MHz, 28V, LDMOS, SOT1826
PDF
AFT26P100-4WSR3 AFT26P100-4WSR3 Freescale 类似代替 NI-780S-4
RF Power Transistor,2496 to 2690MHz, 87W, Typ Gain in dB is 15.3 @ 2690MHz, 28V, LDMOS, SOT1826
PDF

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