Technical parameters/frequency: 2.69 GHz
Technical parameters/rated current: 10 µA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/output power: 22 W
Technical parameters/gain: 15.1 dB
Technical parameters/test current: 200 mA
Technical parameters/operating temperature (Max): 225 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/rated voltage: 65 V
Technical parameters/power supply voltage: 28 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: NI-780HS-4
External dimensions/packaging: NI-780HS-4
Physical parameters/weight: 2953.3 mg
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AFT26P100-4WSR3
|
NXP | 类似代替 | NI-780HS-4 |
RF Power Transistor,2496 to 2690MHz, 87W, Typ Gain in dB is 15.3 @ 2690MHz, 28V, LDMOS, SOT1826
|
||
AFT26P100-4WSR3
|
Freescale | 类似代替 | NI-780S-4 |
RF Power Transistor,2496 to 2690MHz, 87W, Typ Gain in dB is 15.3 @ 2690MHz, 28V, LDMOS, SOT1826
|
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