Technical parameters/frequency: 50 MHz
Technical parameters/rated voltage (DC): -300 V
Technical parameters/rated current: -500 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 50 MHz
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 25 @30mA, 10V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBTA92LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBTA92LT1G 单晶体管 双极, 通用, PNP, -300 V, 50 MHz, 300 mW, -500 mA, 50 hFE
|
||
MPSA92RLRP
|
ON Semiconductor | 完全替代 | TO-226-3 |
TO-92 PNP 300V 0.5A
|
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