Technical parameters/rated voltage (DC): -300 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 25 @30mA, 10V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA92RLRMG
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON SEMICONDUCTOR MPSA92RLRMG 双极性晶体管, PNP -300V TO-92
|
||
MPSA92RLRPG
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON SEMICONDUCTOR MPSA92RLRPG 单晶体管 双极, PNP, 300 V, 50 MHz, 625 mW, 500 mA, 40 hFE
|
||
MPSA92ZL1G
|
ON Semiconductor | 完全替代 | TO-226-3 |
ON SEMICONDUCTOR MPSA92ZL1G 双极性晶体管, PNP, 300V V(BR)CEO, 500mA I(C), TO-92
|
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