Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 功能相似 | TO-92 |
NPN通用晶体管 NPN general purpose transistor
|
||
MPSA06
|
Diotec Semiconductor | 功能相似 | TO-92 |
NPN通用晶体管 NPN general purpose transistor
|
||
MPSA06
|
Philips | 功能相似 |
NPN通用晶体管 NPN general purpose transistor
|
|||
MPSA06
|
Multicomp | 功能相似 | TO-92 |
NPN通用晶体管 NPN general purpose transistor
|
||
MPSA06
|
Central Semiconductor | 功能相似 | TO-92-3 |
NPN通用晶体管 NPN general purpose transistor
|
||
MPSA06
|
NTE Electronics | 功能相似 |
NPN通用晶体管 NPN general purpose transistor
|
|||
|
|
NXP | 功能相似 | SOT-54-3 |
NPN通用晶体管 NPN general purpose transistor
|
||
MPSA06,126
|
NXP | 类似代替 | TO-226-3 |
SPT NPN 80V 0.5A
|
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