Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 1.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1000 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 4000 @1A, 5V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 7.87 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | CASE 29-11 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
||
|
|
Motorola | 功能相似 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
|||
BC337-40
|
NXP | 功能相似 | TO-92-3 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
||
BC337-40
|
Allied Components | 功能相似 |
Trans GP BJT NPN 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
|||
BC33725TA
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON Semiconductor BC33725TA , NPN 晶体管, 800mA, Vce=45 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
||
PN2907ABU
|
Fairchild | 类似代替 | TO-226-3 |
PN系列 PNP 625 mW 60 V 800 mA 通孔 通用 晶体管-TO-92-3
|
||
PN2907ABU
|
ON Semiconductor | 类似代替 | TO-226-3 |
PN系列 PNP 625 mW 60 V 800 mA 通孔 通用 晶体管-TO-92-3
|
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