Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -3.00 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 75 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 5.60 A
Technical parameters/rise time: 135 ns
Technical parameters/Input capacitance (Ciss): 1400pF @16V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7204TRPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRF7204TRPBF 晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
|
||
IRF7204TRPBF
|
IFC | 功能相似 |
INFINEON IRF7204TRPBF 晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
|
|||
MMSF3P02HDR2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
P 通道功率 MOSFET，20V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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