Technical parameters/rated voltage (DC): | -20.0 V |
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Technical parameters/rated current: | -3.00 A |
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Technical parameters/drain source resistance: | 0.06 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/threshold voltage: | 1.5 V |
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Technical parameters/Input capacitance: | 1.40 nF |
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Technical parameters/gate charge: | 46.0 nC |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 5.60 A |
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Technical parameters/rise time: | 135 ns |
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Technical parameters/Input capacitance (Ciss): | 1400pF @16V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2.5W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMSF3P02HDR2
|
ON Semiconductor | 类似代替 | SOIC-8 |
功率MOSFET 3安培， 20伏P沟道SO- 8 Power MOSFET 3 Amps, 20 Volts P−Channel SO−8
|
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