Technical parameters/frequency: 200 MHz
Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -600 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT4403LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT4403LT1G 单晶体管 双极, 通用, PNP, -40 V, 200 MHz, 300 mW, -600 mA, 200 hFE
|
||
MMST4403-7
|
Diodes Zetex | 类似代替 | SOT-323-3 |
TRANS PNP 40V 0.6A SC70-3
|
||
MMST4403-7
|
Diodes | 类似代替 | SOT-323 |
TRANS PNP 40V 0.6A SC70-3
|
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