Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 85 @800mA, 1V
Technical parameters/rated power (Max): 3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.57 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMJT9410T1
|
ON Semiconductor | 类似代替 | TO-261-4 |
双极功率晶体管NPN硅集电极 - 发射极耐受电压 - VCEO（SUS） = 30 VDC（最小）@ IC= 10 MADC•高DC电流增益 - HFE=85（分钟）@ IC= 0.8 ADC=60（分钟）@ IC= 3.0 ADC•低集电极 - 发射极饱和电..
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