Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 3.00 A |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 3 W |
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Technical parameters/gain bandwidth product: | 72 MHz |
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Technical parameters/breakdown voltage (collector emitter): | 30 V |
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Technical parameters/Maximum allowable collector current: | 3A |
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Technical parameters/minimum current amplification factor (hFE): | 85 @800mA, 1V |
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Technical parameters/rated power (Max): | 3 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 1700 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Length: | 6.5 mm |
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Dimensions/Width: | 3.5 mm |
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Dimensions/Height: | 1.57 mm |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs Information/Hong Kong Import and Export License: | NLR |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMJT9410T1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
双极晶体管 - 双极结型晶体管(BJT) 3A 30V 3W NPN
|
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