Technical parameters/rated voltage (DC): -25.0 V
Technical parameters/rated current: -2.50 A
Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 250 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/input capacitance: 475 pF
Technical parameters/gate charge: 15.0 nC
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: 25 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/Input capacitance (Ciss): 475pF @16V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMDF2P02ER2
|
ON Semiconductor | 类似代替 | SOIC |
功率MOSFET 2安培， 25伏P沟道SO- 8 ，双 Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual
|
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