Technical parameters/rated voltage (DC): -25.0 V
Technical parameters/rated current: -2.50 A
Technical parameters/drain source resistance: 250 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/input capacitance: 475 pF
Technical parameters/gate charge: 15.0 nC
Technical parameters/drain source voltage (Vds): 25.0 V
Technical parameters/leakage source breakdown voltage: 25.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMDF2P02ER2G
|
ON Semiconductor | 类似代替 | SOIC-8 |
功率MOSFET 2安培, 25伏P沟道SO- 8 ,双 Power MOSFET 2 Amps, 25 Volts P−Channel SO−8, Dual
|
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