Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 20000 @100mA, 5V
Technical parameters/rated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBTA63-7-F
|
Diodes | 功能相似 | SOT-23-3 |
MMBTA63-7-F 编带
|
||
MMBTA63-7-F
|
Diodes Zetex | 功能相似 | SOT-23 |
MMBTA63-7-F 编带
|
||
MMBTA64
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBTA64.. 双极性晶体管, PNP, -30V
|
||
|
|
CJ | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBTA64.. 双极性晶体管, PNP, -30V
|
||
MMBTA64LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBTA64LT1G 单晶体管 双极, PNP, -30 V, 125 MHz, 225 mW, -500 mA, 10000 hFE
|
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