Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 300 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 330 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.3A
Technical parameters/minimum current amplification factor (hFE): 20000 @100mA, 5V
Technical parameters/rated power (Max): 330 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 125MHz (Min)
Technical parameters/dissipated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBTA14LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBTA14LT1G 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 225 mW, 300 mA, 10000 hFE
|
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