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Description ON SEMICONDUCTOR MMBTA14LT1G 单晶体管 双极, 达林顿, NPN, 30 V, 125 MHz, 225 mW, 300 mA, 10000 hFE
Product QR code
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.15  yuan 0.15yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6041) Minimum order quantity(1)
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Technical parameters/frequency:

125 MHz

 

Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

300 mA

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/number of pins:

3

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

225 mW

 

Technical parameters/breakdown voltage (collector emitter):

30 V

 

Technical parameters/Maximum allowable collector current:

0.3A

 

Technical parameters/minimum current amplification factor (hFE):

20000 @100mA, 5V

 

Technical parameters/rated power (Max):

225 mW

 

Technical parameters/DC current gain (hFE):

20000

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/gain bandwidth:

125MHz (Min)

 

Technical parameters/dissipated power (Max):

300 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

3.04 mm

 

Dimensions/Width:

1.3 mm

 

Dimensions/Height:

1.01 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Automotive, Power Management, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standard

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