Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 500 mA
Technical parameters/rated power: 625 mW
Technical parameters/output voltage: 30 V
Technical parameters/output current: 500 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 20000 @100mA, 5V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 20000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 125MHz (Min)
Technical parameters/dissipated power (Max): 625 mW
Technical parameters/input voltage: 10 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA14RLRP
|
ON Semiconductor | 完全替代 | TO-226-3 |
达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
|
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