Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -800 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.35 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 400
Technical parameters/rated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC807-40-7-F
|
Diodes | 功能相似 | SOT-23-3 |
DIODES INC. BC807-40-7-F 单晶体管 双极, PNP, -45 V, 100 MHz, 310 mW, -500 mA, 250 hFE
|
||
MMBT4403LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT4403LT1G 单晶体管 双极, 通用, PNP, -40 V, 200 MHz, 300 mW, -600 mA, 200 hFE
|
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