Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 50.0 mA
Technical parameters/breakdown voltage: -30.0 V|30 V
Technical parameters/drain source resistance: 30 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/breakdown voltage of gate source: 30 V
Technical parameters/Continuous drain current (Ids): 50.0 mA
Technical parameters/Input capacitance (Ciss): 14pF @20V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 |
N-Channel Switch
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MMBF4392LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBF4392LT1G 晶体管, JFET, JFET, 30 V, 25 mA, 75 mA, -5 V, SOT-23, JFET
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||
MMBF4393LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBF4393LT1G 晶体管, JFET, JFET, 30 V, 5 mA, 30 mA, -3 V, SOT-23, JFET
|
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