Technical parameters/rated power: 92 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 92 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 550 V
Technical parameters/Continuous drain current (Ids): 13A
Technical parameters/rise time: 6.4 ns
Technical parameters/Input capacitance (Ciss): 773pF @100V(Vds)
Technical parameters/descent time: 7.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 119W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Lighting, Power Management, Consumer Electronics
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPD50R380CE
|
Infineon | 类似代替 | TO-252-3 |
Infineon CoolMOS™CE/CFD 功率 MOSFET ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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