Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 350 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 98 W |
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Technical parameters/threshold voltage: | 2.5 V |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Leakage source breakdown voltage: | 500 V |
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Technical parameters/Continuous drain current (Ids): | 9.9A |
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Technical parameters/rise time: | 5.6 ns |
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Technical parameters/Input capacitance (Ciss): | 584pF @100V(Vds) |
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Technical parameters/rated power (Max): | 73 W |
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Technical parameters/descent time: | 8.6 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 73W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.5 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.3 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPD50R280CEATMA1
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IPD50R280CEATMA1 晶体管, MOSFET, N沟道, 13 A, 550 V, 0.25 ohm, 13 V, 3 V
|
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