Technical parameters/frequency: 2 MHz
Technical parameters/dissipated power: 0.6 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 20 @4A, 4V
Technical parameters/rated power (Max): 600 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE2955T
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ST Microelectronics | 功能相似 | TO-220-3 |
t-Pnp Si-Gen Pur Amp + Sw
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SavantIC Semiconductor | 功能相似 |
t-Pnp Si-Gen Pur Amp + Sw
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Inchange Semiconductor | 功能相似 |
t-Pnp Si-Gen Pur Amp + Sw
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Tigal | 功能相似 |
t-Pnp Si-Gen Pur Amp + Sw
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MJE2955T
|
UTC | 功能相似 | TO-220 |
t-Pnp Si-Gen Pur Amp + Sw
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Freescale | 功能相似 |
t-Pnp Si-Gen Pur Amp + Sw
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Motorola | 功能相似 | TO-220 |
t-Pnp Si-Gen Pur Amp + Sw
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Tigal | 功能相似 |
t-Npn Si-Gen Pur Amp & Sw ; Rohs Compliant: Yes
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DC Components | 功能相似 |
t-Npn Si-Gen Pur Amp & Sw ; Rohs Compliant: Yes
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Wings | 功能相似 |
t-Npn Si-Gen Pur Amp & Sw ; Rohs Compliant: Yes
|
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Inchange Semiconductor | 功能相似 |
t-Npn Si-Gen Pur Amp & Sw ; Rohs Compliant: Yes
|
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MJE3055T
|
UTC | 功能相似 | TO-220 |
t-Npn Si-Gen Pur Amp & Sw ; Rohs Compliant: Yes
|
||
MJE3055T
|
Fairchild | 功能相似 | SFM |
t-Npn Si-Gen Pur Amp & Sw ; Rohs Compliant: Yes
|
||
|
|
Wing Shing International Group | 功能相似 |
t-Npn Si-Gen Pur Amp & Sw ; Rohs Compliant: Yes
|
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