Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 8.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 20 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 40 @4A, 1V
Technical parameters/rated power (Max): 20 W
Technical parameters/DC current gain (hFE): 60
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 20000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
TY Semiconductor | 类似代替 |
互补硅PNP晶体管 COMPLEMENTARY SILICON PNP TRANSISTORS
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Kexin | 类似代替 |
互补硅PNP晶体管 COMPLEMENTARY SILICON PNP TRANSISTORS
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MJD44H11G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD44H11G 单晶体管 双极, 音频, NPN, 80 V, 85 MHz, 20 W, 8 A, 60 hFE
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