Technical parameters/frequency: | 85 MHz |
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Technical parameters/rated voltage (DC): | 80.0 V |
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Technical parameters/rated current: | 8.00 A |
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Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 20 W |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/thermal resistance: | 6.25℃/W (RθJC) |
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Technical parameters/Maximum allowable collector current: | 8A |
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Technical parameters/minimum current amplification factor (hFE): | 40 @4A, 1V |
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Technical parameters/rated power (Max): | 1.75 W |
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Technical parameters/DC current gain (hFE): | 60 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1750 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Other/Manufacturing Applications: | Audio, Industrial, Industrial, Audio |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD44H11RLG
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD44H11RLG 功率晶体管, NPN, 80V, D-PAK
|
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MJD44H11T4G
|
ON Semiconductor | 完全替代 | TO-252-3 |
ON SEMICONDUCTOR MJD44H11T4G 单晶体管 双极, NPN, 80 V, 85 MHz, 20 W, 8 A, 40 hFE 新
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