Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 10000mA
Technical parameters/minimum current amplification factor (hFE): 20
Technical parameters/Maximum current amplification factor (hFE): 100
Encapsulation parameters/Encapsulation: TO-252-2
External dimensions/packaging: TO-252-2
Other/Minimum Packaging: 80
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP41,115
|
Nexperia | 功能相似 | TO-261-4 |
Nexperia BSP41,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:30, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
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BSP41,115
|
NXP | 功能相似 | TO-261-4 |
Nexperia BSP41,115 , NPN 晶体管, 1 A, Vce=60 V, HFE:30, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
||
MJD2955G
|
ON Semiconductor | 功能相似 | TO-252-3 |
MJD 系列 60 V 10 A PNP 互补 功率晶体管 - TO-252-3
|
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MJD2955T4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD2955T4G Bipolar (BJT) Single Transistor, PNP, -60 V, 2 MHz, 1.75 W, -10 A, 5 hFE 新
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