Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1560 mW
Technical parameters/gain bandwidth product: 3 MHz
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 10 @3A, 4V
Technical parameters/Maximum current amplification factor (hFE): 50
Technical parameters/rated power (Max): 1.56 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.1 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH32CTF
|
ON Semiconductor | 类似代替 | TO-252-3 |
Power PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
MJD32CTF
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR MJD32CTF 单晶体管 双极, PNP, -100 V, 3 MHz, 1.56 W, -3 A, 10 hFE
|
||
MJD32CTF
|
ON Semiconductor | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR MJD32CTF 单晶体管 双极, PNP, -100 V, 3 MHz, 1.56 W, -3 A, 10 hFE
|
||
MJD32CTM
|
Fairchild | 类似代替 | TO-252-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP 100V 1A Epitaxial
|
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