Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 10 @3A, 4V
Technical parameters/rated power (Max): 1.56 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 15 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.1 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD32CRLG
|
ON Semiconductor | 类似代替 | TO-252-3 |
PNP 功率晶体管，ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
||
NJVMJD32CG
|
ON Semiconductor | 类似代替 | TO-252-3 |
互补功率晶体管 Complementary Power Transistors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review