Technical parameters/frequency: 3 MHz
Technical parameters/rated power: 1.56 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 3.9 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 10 @3A, 4V
Technical parameters/Maximum current amplification factor (hFE): 40 @3A, 4V
Technical parameters/rated power (Max): 1.56 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.8 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 |
互补功率晶体管 Complementary Power Transistors
|
|||
MJD31C
|
ON Semiconductor | 功能相似 | DPAK-252 |
互补功率晶体管 Complementary Power Transistors
|
||
MJD31CQ-13
|
Diodes | 类似代替 | TO-252-3 |
Trans GP BJT NPN 100V 3A 1500mW Automotive 3Pin(2+Tab) TO-252 T/R
|
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