Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 1560 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 100 V |
|
Technical parameters/Maximum allowable collector current: | 3A |
|
Technical parameters/minimum current amplification factor (hFE): | 10 |
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Technical parameters/maximum current amplification factor (hFE): | 50 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 1560 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | DPAK-252 |
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Dimensions/Packaging: | DPAK-252 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Other/Minimum Packaging: | 2500 |
|
Compliant with standards/RoHS standards: | Non-Compliant |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR MJD31CG 单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
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|||
MJD31CT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD31CT4G 单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
|
||
|
|
Fairchild | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD31CT4G 单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
|
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