Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/dissipated power: 20 W
Technical parameters/gain bandwidth product: 2 MHz
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 20 @4A, 4V
Technical parameters/rated power (Max): 1.75 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD3055G
|
ON Semiconductor | 功能相似 | TO-252-3 |
NPN 功率晶体管，ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
|
||
MJD3055T4
|
ON Semiconductor | 功能相似 | TO-252-3 |
STMICROELECTRONICS MJD3055T4 单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE
|
||
MJD3055T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS MJD3055T4 单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE
|
||
MJD3055T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD3055T4G 双极性晶体管
|
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