logo
BOM RFQ Login Register
English
Home Page   Discrete Device   transistor   Bipolar transistor   MJD3055G
Warm reminder: The pictures are for reference only. The actual product may vary
Collection
Model MJD3055G
Description NPN Power transistor, ON Semiconductor # # # standard manufacturer part number with NSV prefix has automotive qualification and complies with AEC-Q101 standard. ###Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, general-purpose transistors, dual NPN and PNP transistors, power transistors, high-voltage transistors, RF bipolar transistors, low-noise, dual matched, and complex bipolar transistors
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.79  yuan 4.79yuan
5+:
$ 6.4665
25+:
$ 5.9875
50+:
$ 5.6522
100+:
$ 5.5085
500+:
$ 5.4127
2500+:
$ 5.2930
5000+:
$ 5.2451
10000+:
$ 5.1732
Quantity
5+
25+
50+
100+
500+
Price
$6.4665
$5.9875
$5.6522
$5.5085
$5.4127
Price $ 6.4665 $ 5.9875 $ 5.6522 $ 5.5085 $ 5.4127
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2034) Minimum order quantity(5)
Add to Cart Buy now
Welcome to use ICGOODFIND AI Assistant
Chip AI consultant  Chip AI consultant
Download related files
PDF
  • Disappointment
  • General
  • Satisfied
  • Like
  • Love it so much

Technical parameters/frequency: 2 MHz

Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 10.0 A

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 1.75 W

Technical parameters/breakdown voltage (collector emitter): 60 V

Technical parameters/thermal resistance: 6.25℃/W (RθJC)

Technical parameters/maximum allowable collector current: 10A

Technical parameters/minimum current amplification factor (hFE): 20 @4A, 4V

Technical parameters/rated power (Max): 1.75 W

Technical parameters/DC current gain (hFE): 10

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 20 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.38 mm

External dimensions/packaging: TO-252-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2016/06/20

Customs information/ECCN code: EAR99

The most helpful review

  Only display evaluations with images

Latest Review

Load more

There is no evaluation yet

Looking forward to your sharing the joy brought by technology

Ask a question
Most helpful | Latest
Sorry, I couldn't find the answer. You can click "Ask a Question" to submit this question to the official customer service and product manager of Suteshop Mall who have already purchased it. We will reply in a timely manner.

No questions have been asked yet

I'm not very familiar with the product yet. Just ask around

Load more
    No data available for the time being.

Product inquiry

Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MJD3055G MJD3055G ON Semiconductor 类似代替 TO-252-3
NPN 功率晶体管，ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
PDF
MJD3055T4 MJD3055T4 ON Semiconductor 类似代替 TO-252-3
互补功率晶体管DPAK对于表面贴装应用 Complementary Power Transistors DPAK For Surface Mount Applications
PDF
MJD3055T4 MJD3055T4 ST Microelectronics 类似代替 TO-252-3
互补功率晶体管DPAK对于表面贴装应用 Complementary Power Transistors DPAK For Surface Mount Applications
PDF

Newly listed products

Product service

PLATFORM

CONTACT US

  • ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
  • Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • Tel: +86-0755-82866643

CONTACT INFORMATION

  • WhatsApp：+8615820418003
  • Facebook Messenger：Emily He
  • WeChat：15820418003
  • Telegram：+8613641420552
  • Microsoft Teams：newkasion1
  • E-mail：sales@icgoodfind.com
  • Technical Cooperation：Ericguo@icgoodfind.com
Product Index：
Brand Index：
Friendship link : Chinese Electronic Component Distributor | STM | broadcom | Altera | ISSI | onsemi | nexperia | NXP | Microchip | diodes | lattice | Electronic Component Distributor | Analog Devices | XILINX | Texas Instruments | Infineon | TiToK | YouTube | X | Linkedln | Facebook | VK |

©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.

Scroll

Comparison

Unfold

pk

Clear