Technical parameters/dissipated power: 115 W
Technical parameters/breakdown voltage (collector emitter): 70 V
Technical parameters/minimum current amplification factor (hFE): 20 @4A, 4V
Technical parameters/rated power (Max): 115 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-2
External dimensions/packaging: TO-3-2
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Mospec | 功能相似 | TO-204 |
t-Pnp Si- Af Po Sw
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MJ2955
|
Motorola | 功能相似 |
t-Pnp Si- Af Po Sw
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MJ2955
|
ON Semiconductor | 功能相似 | TO-204-2 |
t-Pnp Si- Af Po Sw
|
||
MJ2955
|
Continental Device | 功能相似 |
t-Pnp Si- Af Po Sw
|
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|
TT Electronics/Optek Technology | 功能相似 |
t-Pnp Si- Af Po Sw
|
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MJ2955
|
Motorola | 功能相似 |
t-Pnp Si- Af Po Sw
|
|||
MJ2955
|
Central Semiconductor | 功能相似 | TO-3-2 |
t-Pnp Si- Af Po Sw
|
||
|
|
Boca Semiconductor | 功能相似 |
t-Pnp Si- Af Po Sw
|
|||
MJ2955G
|
ON Semiconductor | 类似代替 | TO-204-2 |
ON SEMICONDUCTOR MJ2955G 单晶体管 双极, PNP, -60 V, 2.5 MHz, 115 W, -15 A, 5 hFE 新
|
||
MJ2955G
|
ST Microelectronics | 类似代替 |
ON SEMICONDUCTOR MJ2955G 单晶体管 双极, PNP, -60 V, 2.5 MHz, 115 W, -15 A, 5 hFE 新
|
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