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Model MJ2955G
Description ON SEMICONDUCTOR MJ2955G Single transistor bipolar, PNP, -60 V, 2.5 MHz, 115 W, -15 A, 5 hFE new
Product QR code
Packaging TO-204-2
Delivery time
Packaging method Tray
Standard packaging quantity 1
15.77  yuan 15.77yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6419) Minimum order quantity(1)
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Technical parameters/frequency:

2.5 MHz

 

Technical parameters/rated voltage (DC):

-60.0 V

 

Technical parameters/rated current:

-15.0 A

 

Technical parameters/number of pins:

2

 

Technical parameters/polarity:

PNP, P-Channel

 

Technical parameters/dissipated power:

115 W

 

Technical parameters/breakdown voltage (collector emitter):

60 V

 

Technical parameters/thermal resistance:

1.52℃/W (RθJC)

 

Technical parameters/Maximum allowable collector current:

15A

 

Technical parameters/minimum current amplification factor (hFE):

20 @4A, 4V

 

Technical parameters/rated power (Max):

115 W

 

Technical parameters/DC current gain (hFE):

2

 

Technical parameters/operating temperature (Max):

200 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

115000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

2

 

Encapsulation parameters/Encapsulation:

TO-204-2

 

Dimensions/Length:

39.37 mm

 

Dimensions/Width:

26.67 mm

 

Dimensions/Height:

8.51 mm

 

Dimensions/Packaging:

TO-204-2

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 200℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tray

 

Other/Manufacturing Applications:

Industrial, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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